In this research, the fabrication of Blue-light micro-LED display, high contrast and with resolution is 64 32 pixels, is developed and improved. In traditional micro-LED technique, some parts of LED light may be scattered caused by total reflection effect is produced in the inner structure of sapphire substrate, part of light may be absorbed by epilayer and metal electrodes in the sapphire structure. The contrast of LED is reduced caused by total reflection effect. Black photoresist is used to fill in the gaps between pixels for preventing leakage. And the light shielding property of black photoresist is also be used to separate each pixel LED to raise the contrast of micro-LED display. The luminous efficacy of this new blue-light micro-LED can be raised by below three LED fabrication improvements. Polishing sapphire substrate till it is as transparent, coating metal wires, which are with good reflectivity, are as p-electrodes, and electrodeless design is applied on n-electrodes.Driving mode of this display is multi-electrodes addressable controlling, series resistance is a key factor for the photoelectric characteristics and homogeneity of micro-LED display. There are several different types metal wires and electrodes developed in this study to analyze the photoelectric characteristics of micro-LED display with different wires and electrodes, performance of blue-light micro-LED display can be improved.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon