With the rapid development of semiconductors, today's optical lithography is approaching its physical limits, and thus alternative patterning technology is urgently desired. Extreme ultra-violet (EUV) lithography, using a wavelength of 13.5 nm, is considered one of the most prominent candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements following the ITRS roadmap. Though polymer-based CAR (chemically amplified resist) is the current standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, our recent progress in metal oxide nanoparticle photoresist research will be discussed. Brief discussion of a number of important structure and property issues pertaining to key characteristics affecting resist performance is also included.
Christopher K. Ober, Hong Xu, Vasiliki Kosma, Kazunori Sakai, and Emmanuel P. Giannelis, "EUV photolithography: resist progress and challenges," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058306 (Presented at SPIE Advanced Lithography: February 26, 2018; Published: 19 March 2018); https://doi.org/10.1117/12.2302759.
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