Although lens aberrations in EUV imaging systems are very small, aberration impacts on pattern placement error and overlay error need to be carefully investigated to obtain the most robust lithography process for high volume manufacturing. Instead of focusing entirely on pattern placement errors in the context of a single lithographic process, we holistically study the interaction between two sequential lithographic layers affected by evolving aberration wavefronts, calculate aberration induced overlay error, and explore new strategies to improve overlay.
Yulu Chen, Lars Liebmann, Lei Sun, Allen Gabor, Shuo Zhao, Feixiang Luo, Obert Wood, Xuemei Chen, Daniel Schmidt, Michael Kling, and Francis Goodwin, "Holistic analysis of aberration induced overlay error in EUV lithography," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830D (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 19 March 2018); https://doi.org/10.1117/12.2297027.
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