With the introduction of its fifth-generation NXE:3400B scanner, ASML brought EUV to High- Volume Manufacturing for 7 nm node lithography and beyond with full support of pellicle. This paper presents an update on lithographic performance results obtained with the NXE:3400B, characterized by an NA of 0.33, a Pupil Fill Ratio (PFR) of 0.2 and throughput capability of 125 wafers per hour. Advances in source power and system availability have enabled a continued increase of productivity. To maximize the number of yielding dies per day excellent Overlay, Focus, and Critical Dimension (CD) control have been realized, combining intrinsic tool stability with holistic control schemes. We will also show matching performance for both Overlay and Imaging, and further improvements in Focus Process Dependencies for the 5nm node.
Roderik van Es, Mark van de Kerkhof, Arthur Minnaert, Geert Fisser, Jos de Klerk, Joost Smits, Roel Moors, Eric Verhoeven, Leon Levasier, Rudy Peeters, Marco Pieters, and Hans Meiling, "EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830H (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 19 March 2018); https://doi.org/10.1117/12.2299503.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon