This paper summarizes findings for an N5 equivalent M2 (pitch 32) layer patterned by means of SE EUV. Different mask tonalities and resist tonalities have been explored and a full patterning (litho plus etch) process into a BEOL stack has been developed. Resolution enhancement techniques like SRAFs insertion and retargeting have been evaluated and compared to a baseline clip just after OPC. Steps forward have been done to develop a full patterning process using SE EUV, being stochastics and variability the main items to address.
V. M. Blanco Carballo, J. Bekaert, J. H. Franke, R. H. Kim, E. Hendrickx, L. E. Tan, W. Gillijns, Y. Drissi, M. Mao, G. McIntyre, M. Dusa, M. Kupers, D. Rio, G. Schiffelers, E. De Poortere, J. Jia, S. Hsu, M. Demand, K. Nafus, and S. Biesemans, "Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830L (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 21 March 2018); https://doi.org/10.1117/12.2299639.
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