This paper summarizes findings for an N5 equivalent M2 (pitch 32) layer patterned by means of SE EUV. Different mask tonalities and resist tonalities have been explored and a full patterning (litho plus etch) process into a BEOL stack has been developed. Resolution enhancement techniques like SRAFs insertion and retargeting have been evaluated and compared to a baseline clip just after OPC. Steps forward have been done to develop a full patterning process using SE EUV, being stochastics and variability the main items to address.
V. M. Blanco Carballo, J. Bekaert, J. H. Franke, R. H. Kim, E. Hendrickx, L. E. Tan, W. Gillijns, Y. Drissi, M. Mao, G. McIntyre, M. Dusa, M. Kupers, D. Rio, G. Schiffelers, E. De Poortere, J. Jia, S. Hsu, M. Demand, K. Nafus, and S. Biesemans, "Single exposure EUV of 32nm pitch logic structures: patterning performance on BF and DF masks," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830L (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 21 March 2018); https://doi.org/10.1117/12.2299639.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the proceedings. They include the speaker's narration with video of the slides and animations. Most include full-text papers. Interactive, searchable transcripts and closed captioning are now available for 2018 presentations, with transcripts for prior recordings added daily.
Search our growing collection of more than 16,000 conference presentations, including many plenaries and keynotes.