This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, compared to standard Via patterning, has no beneficial impact but prevents dielectric breakdown between two adjacent M1 lines.
Benjamin Vincent, Joern-Holger Franke, Aurelie Juncker, Frederic Lazzarino, Gayle Murdoch, Sandip Halder, and Joseph Ervin, "Self-aligned block and fully self-aligned via for iN5 metal 2 self-aligned quadruple patterning," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830W (Presented at SPIE Advanced Lithography: February 28, 2018; Published: 19 March 2018); https://doi.org/10.1117/12.2298761.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon