Illumination source optimization is a very fundamental task in wafer lithography. By optimizing the incidence angles at the reticle, the combined diffraction behavior of mask and projection optics can be modified. One of the most critical parameter to control in EUV lithography is contrast at best and through focus as this drives the stochastic effects. In this work, we will look at the illumination source optimization for staggered CH and pillars for DRAM applications driven by fundamental considerations at diffraction level.
Jo Finders, Ziyang Wang, John McNamara, Gijsbert Rispens, Pär Broman, Chang-Nam Ahn, Inhwan Lee, Hwan Kim, Junghyun Kang, Yoonsuk Hyun, and Chang-Moon Lim, "Illumination source optimization in EUV lithography for staggered contact holes and pillars for DRAM applications," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105830Y (Presented at SPIE Advanced Lithography: February 28, 2018; Published: 2 May 2018); https://doi.org/10.1117/12.2299598.
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