The understanding, characterization and mitigation of 3D mask effects including telecentricity errors, contrast fading and best focus shifts becomes increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. The scattering of light at the absorber edges results in significant phase deformations, which impact the effective phase and the lithographic performance of attenuated phase shift mask (attPSM) for EUV. We employ rigorous mask and imaging simulations in combination with multi-objective optimization techniques to identify the most appropriate material properties, mask and source geometries and to explore the potential of attPSMs for future EUV imaging.
Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, and Markus Bauer, "Attenuated PSM for EUV: Can they mitigate 3D mask effects?," Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 1058312 (Presented at SPIE Advanced Lithography: February 28, 2018; Published: 19 March 2018); https://doi.org/10.1117/12.2299648.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 12,000 conference presentations, including many plenary and keynote presentations.