A low cost alternative lithographic technology is desired to cope with the challenges in decreasing feature size of semiconductor devices. Nano-imprint lithography (NIL) is one of the viable candidates. NIL has been a promising solution to overcome the cost issue associated with expensive process and tool of multi patterning and EUVL. NIL is a simple technology and is capable of forming critical patterns easily. On the other hand, the critical issues of NIL are defectivity, overlay, and throughput. In order to introduce NIL into the High Volume Manufacturing (HVM), it is necessary to overcome these three challenges simultaneously.- In our previous study, we have reported improvement in NIL overlay, defectivity and throughput by the optimization of resist process on a pilot line tool, FPA-1200 NZ2C. In this study, we report recent evaluation of the NIL performance to judge its applicability in semiconductor device HVM. We have described that the NIL is getting closer to the target of HVM for 2x nm half pitch.Defectivity level below 1pcs/cm2 has been achieved for the 2x nm half pitch L/S. The overlay accuracy of the test device is being improved down to 6nm or lower by introducing high order distortion correction.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.