Nowadays, roughness control presents a huge challenge for the lithography step. For advanced nodes, this morphological aspect reaches the same order of magnitude than the Critical Dimension. Hence, the control of roughness needs an adapted metrology. In this study, specific samples with designed roughness have been manufactured using e-beam lithography. These samples have been characterized with three different methodologies: CD-SEM, OCD and SAXS. The main goal of the project is to compare the capability of each of these techniques in terms of reliability, type of information obtained, time to obtain the measurements and level of maturity for the industry.
Jérôme Reche, Maxime Besacier, Patrice Gergaud, Yoann Blancquaert, Guillaume Freychet, and Thibault Labbaye, "Programmed LWR metrology by multi-techniques approach," Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850F (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 13 March 2018); https://doi.org/10.1117/12.2292169.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon