This paper demonstrates the improvement using the YieldStar S-1250D small spot, high-NA, after-etch overlay in-device measurements in a DRAM HVM environment. It will be demonstrated that In-device metrology (IDM) captures after-etch device fingerprints more accurately compared to the industry-standard CDSEM. Also, IDM measurements (acquiring both CD and overlay) can be executed significantly faster increasing the wafer sampling density that is possible within a realistic metrology budget. The improvements to both speed and accuracy open the possibility of extended modeling and correction capabilities for control. The proof-book data of this paper shows a 36% improvement of device overlay after switching to control in a DRAM HVM environment using indevice metrology.
Dong-Kiu Park, Hyun-Sok Kim, Moo-Young Seo, Jae-Wuk Ju, Young-Sik Kim, Mir Shahrjerdy, Arno van Leest, Aileen Soco, Giacomo Miceli, Jennifer Massier, Elliott McNamara, Paul Hinnen, Paul Böcker, Nang-Lyeom Oh, Sang-Hoon Jung, Yvon Chai, and Jun-Hyung Lee, "Unique method for controlling device level overlay with high-NA optical overlay technique using YieldStar in a DRAM HVM environment," Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105850V (Presented at SPIE Advanced Lithography: February 28, 2018; Published: 13 March 2018); https://doi.org/10.1117/12.2297094.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon