In this paper, we discuss the metrology methods and error budget that describe the edge placement error (EPE). EPE quantifies the pattern fidelity of a device structure made in a multi-patterning scheme. Here the pattern is the result of a sequence of lithography and etching steps, and consequently the contour of the final pattern contains error sources of the different process steps. EPE is computed by combining optical and ebeam metrology data. We show that high NA optical scatterometer can be used to densely measure in device CD and overlay errors. Large field e-beam system enables massive CD metrology which is used to characterize the local CD error. Local CD distribution needs to be characterized beyond 6 sigma, and requires high throughput e-beam system. We present in this paper the first images of a multi-beam e-beam inspection system. We discuss our holistic patterning optimization approach to understand and minimize the EPE of the final pattern. As a use case, we evaluated a 5-nm logic patterning process based on Self-Aligned-QuadruplePatterning (SAQP) using ArF lithography, combined with line cut exposures using EUV lithography.
Jan Mulkens, Bram Slachter, Michael Kubis, Wim Tel, Paul Hinnen, Mark Maslow, Harm Dillen, Eric Ma, Kevin Chou, Xuedong Liu, Weiming Ren, Xuerang Hu, Fei Wang, and Kevin Liu, "Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements," Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 105851L (Presented at SPIE Advanced Lithography: March 01, 2018; Published: 13 March 2018); https://doi.org/10.1117/12.2297283.
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