Extreme ultraviolet (EUV) lithography is expected to replace current photolithographic methods because of improved resolution. The atomic photon absorption cross section is a central factor that determines the optimal elements around which to base photoresist chemistry, and tin is a strong absorber for EUV photons (~92 eV). β-NaSn13 ([NaO4(BuSn)12(OH)3(O)9(OCH3)12(Sn(H2O)2)]), one of the organo-tin oxo compounds is being studied in this paper using helium ion beam lithography (HIBL) to demonstrate the patterning performance. High aspect ratio (15:1) and dense line patterns (20 nm half pitch) have been achieved with no defects. Thinner films yielded even smaller feature sizes (linewidths of ~ 10 nm). Thinner films require higher dose to get continuous and solid line patterns presumably due to fewer molecules available for condensation. Studies on various substrates indicate that the high Z substrates can help improve the pattern performance at low doses.
Mengjun Li, Viacheslav Manichev, Fangzhou Yu, Danielle Hutchison, May Nyman, Torgny Gustafsson, Leonard C. Feldman, and Eric L. Garfunkel, "Novel Sn-based photoresist for high aspect ratio patterning," Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860K (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 13 March 2018); https://doi.org/10.1117/12.2297440.
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