Linewidth roughness (LWR) remains a difficult challenge for improvement in all resist materials. In this paper, we intend to focus on the impact of key components of LWR by analyzing the Power Spectral Density (PSD) curves which can be obtained using Fractilia’s MetroLER computational software. We will study systematic changes to ArF resist formulations and correlate these changes to the overall PSD curves. In this manner, we can extract LER/LWR 3σ values as well as resist correlation length and the low/high-frequency roughness components. We will also investigate the relationship between PSD and LWR through lithographic/etch processing and demonstrate which components correspond with the largest impact. In order to achieve quality data over low and high frequency ranges we changed our standard metrology setup to capture longer lines. By making systematic changes to the ArF resists, we can determine the key impacts of various controllable resist factors on the PSD. Through systematic analysis, we can deconvolute LWR improvements both after develop and after an etch process.
Charlotte Cutler, James W. Thackeray, Jason DeSisto, John Nelson, Choong-Bong Lee, Mingqi Li, Emad Aqad, Xisen Hou, Tomas Marangoni, Joshua Kaitz, Rochelle Rena, and Chris Mack, "Roughness power spectral density as a function of resist parameters and its impact through process," Proc. SPIE 10587, Optical Microlithography XXXI, 1058707 (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 23 March 2018); https://doi.org/10.1117/12.2297690.
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