We demonstrate high volume manufacturing feasibility of 7 nm technology overlay correction requirement. This stateof- the-art overlay control is achieved by (i) overlay sampling optimization and advanced modeling, (ii) alignment and advanced process control optimization, (iii) multiple target overlay optimization, and (iv) heating control. We will also discuss further improvements in overlay control for 7 nm technology node and beyond including computational metrology, extreme ultraviolet and optic tools overlay matching control, high order alignment correction, tool stability improvement, and advanced heating control.
Nyan Aung, Woong Jae Chung, Pavan Samudrala, Haiyong Gao, Wenle Gao, Darius Brown, Guanchen He, Bono Park, Michael Hsieh, Xueli Hao, Yen-Jen Chen, Yue Zhou, DeNeil Park, Karsten Gutjahr, Ian Krumanocker, Kevin Jock, and Juan Manuel Gomez, "Overlay control for 7nm technology node and beyond," Proc. SPIE 10587, Optical Microlithography XXXI, 105870A (Presented at SPIE Advanced Lithography: February 27, 2018; Published: 20 March 2018); https://doi.org/10.1117/12.2295828.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon