In this paper, results from the development of LWIR and VLWIR InAs/GaSb type-II infrared photodetector arrays are presented. Dark currents comparable to the HgCdTe benchmark (Rule07) have been observed and the quantum efficiencies of the detectors exceed 30 %. Bias and temperature dependencies of the QE have been studied showing very low turn on bias (~-25mV) and no variation of the peak QE value with temperature. These results show that there are no unintentional barriers in the detector structures and that the diffusion lengths are long enough to provide efficient collection of carriers. Initial results from the extension of the cut-off wavelength from 11 μm to 14 μm are also presented as well as initial results from photodiodes with thicker absorbers to enhance the QE.
L. Höglund, J. B. Rodriguez, S. Naureen, R. Ivanov, C. Asplund, R. Marcks von Würtemberg, R. Rossignol, P. Christol, A. Rouvié, J. Brocal, O. Saint-Pé, and E. Costard, "Very long wavelength type-II InAs/GaSb superlattice infrared detectors," Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240I (Presented at SPIE Defense + Security: April 17, 2018; Published: 23 May 2018); https://doi.org/10.1117/12.2292977.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon