Long-wavelength (8-14μm) infrared detection ability using third-generation infrared focal plane array (FPAs) is a desideratum for aerography, military and communication. These optical bands contain tremendous information about CO2 levels, atmospheric quality and biological activity. HgCdTe infrared photodetectors are able to reach high degree of performance even to be background limited. However, the material growth process, doping techniques and capability of defect control become increasingly difficult for the shrinking bandgap. Besides, the dark current characteristic and associated noise behavior are very sensitive to the detector fabrication processes. Thereby, the growth of p-type epitaxial layer is a fundamental and significant subject for long-wavelength HgCdTe infrared photodetector.
Qing Li, Weida Hu, Chun Lin, Xiaoshuang Chen, and Wei Lu, "Dark current characterization of Au and Hg-vacancy hybrid doped p-type epitaxy long-wavelength HgCdTe infrared photodetectors," Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240R (Presented at SPIE Defense + Security: April 17, 2018; Published: 21 June 2018); https://doi.org/10.1117/12.2303831.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.
Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon