Although HgCdTe imagers are a well-established technology, photodetectors fabricated using the same process still yield a large variation in their performance characteristics, largely stemming from hard-to-control pecu- liarities at the interface between the surface passivation and the active region of each photodiode. This work investigates the dark current characteristics of long-wave IR (cutoff wavelength of 10um) Hg0.774Cd0.226Te mesa photodiodes, which have been passivated with a CdTe film. We use a 2-D model of a p-on-n device structure to study how interface states and Cadmium diffusion at the passivation interface can influence the photodiode dark current.
Ilya Prigozhin, Andreu Glasmann, and Enrico Bellotti, "Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance," Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240T (Presented at SPIE Defense + Security: April 17, 2018; Published: 14 May 2018); https://doi.org/10.1117/12.2305127.
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