Teledyne Judson Technologies (TJT) has developed high operating temperature (HOT) mid-wavelength infrared (MWIR) photodetectors based on InAs/InAsSb type-II superlattice (T2SL) with an electron barrier. Large area discrete detectors of 0.25mm and 1mm diameters were designed and fabricated for front-side illumination. Comprehensive E-O characterization was performed at room temperature and thermo-electric cooled (TEC) temperatures. The unique fabrication process was developed for a quasi-planar structure, enabling simplified fabrication for low-cost large volume production. The detector shows a 50% cut-off wavelength of ~5.5μm at room temperature. Peak responsivity of 2.47 A/W was achieved on 1mm detectors at peak wavelength ~ 4.24μm, -0.3V bias and 295K. Peak quantum efficiency (QE) was 72% with an antireflection coating. The 1mm detectors showed peak detectivity (D*) of 1.9x109 cm-√Hz/W at -0.3V bias, 295K and 10 kHz. Dark current density as low as 1.17 A/cm2 was achieved at -0.3V bias and 295K on 1mm detectors. The dark current was diffusion-limited at higher temperatures above ~120K while it was dominated by either tunneling or surface leakage currents at lower temperatures. Similar results were obtained on 0.25mm detectors.
Jongwoo Kim, Henry Yuan, Joe Kimchi, JihFen Lei, Elizabeth Rangel, Peter Dreiske, and Amal Ikhlassi, "HOT MWIR InAs/InAsSb T2SL discrete photodetector development," Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062412 (Presented at SPIE Defense + Security: April 18, 2018; Published: 15 May 2018); https://doi.org/10.1117/12.2303973.
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