Plasma wave electronics approach has a potential for achieving efficient THz emission and sensitive detection using IIIV- based, III-N-based, graphene, Si, SiGe and diamond devices and nanostructure arrays. The physics of these THz plasmonic devices involves collision-dominated, quasi-ballistic, and viscosity dominated regimes of the electron or hole transport. THz plasmonic room temperature detectors have demonstrated excellent performance with potential applications for THz communication and sensing. THz plasmonic emitters based on the Dyakonov-Shur instability and on the “plasmonic boom” concept have promise of achieving high powers at reasonable efficiencies but still should be demonstrated.
Michael Shur, "Plasmonic detectors and sources for THz communication and sensing," Proc. SPIE 10639, Micro- and Nanotechnology Sensors, Systems, and Applications X, 1063929 (Presented at SPIE Defense + Security: April 19, 2018; Published: 14 May 2018); https://doi.org/10.1117/12.2303533.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon