From Event: SPIE Commercial + Scientific Sensing and Imaging, 2018
We review recent progress on GaSb-based AlInAsSb avalanche photodetectors (APD), including preliminary room temperature Geiger mode single photon counting and gains >1000x. AlInAsSb APDs grown digitally  on GaSb have recently shown tunable cutoff wavelengths across the telecommunications band, and noise comparable to that of silicon, independent of alloy composition . We review this progress and describe initial Geiger mode single photon counting success at room temperature.
Geiger performance of an Al0.7In0.3As0.3Sb0.7 APD was characterized with a capacitance-balanced gated quenching circuit in which an avalanche event was quenched by the trailing edge of the gate pulse. The width of driving gate was 5 ns, and repetition rate was 1 MHz. The excess bias was varied from 0.3% to 1% of breakdown voltage. Both photon-induced breakdown probability and dark count probability increase with excess bias until photon-induced breakdown probability saturates at 55%, which is due to high dark count rate. The dark count probability per gate was as high as 60%, which is consistent with the 0.17-nA primary dark current.
 Maddox, March, Bank, ACS Crystal Growth & Design, vol. 16, no. 7, pp. 3582–3586, June 2016.
 Woodson, Ren, Maddox, Chen, Bank, Campbell, Appl. Phys. Lett., vol. 108, no. 8, pp. 081102, Feb. 2016.
Seth R. Bank, "AlInAsSb avalanche detectors for single photon counting (Conference Presentation)," Proc. SPIE 10659, Advanced Photon Counting Techniques XII, 106590B (Presented at SPIE Commercial + Scientific Sensing and Imaging: April 18, 2018; Published: 14 May 2018); https://doi.org/10.1117/12.2305303.5783313378001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon