Hybrid integration of GaInAsP laser diode on silicon platform by epitaxial growth using direct bonded InP/Si substrate is presented. InP/Si substrate was prepared by hydrophilic direct bonding with 1μm thickness of InP layer and silicon substrate annealed at 400°C. GaInAsP/InP double heterostructure was grown by low pressure MOVPE system on the InP/Si substrate. Lasing characteristics were obtained at room temperature by injecting the current through the bonding interface between InP and Si. The threshold current density was comparable to the same laser structure grown on the InP substrate.
Kazuhiko Shimomura, "Hybrid integration of GaInAsP LD on silicon platform by epitaxial growth using directly bonded InP/Si substrate," Proc. SPIE 10682, Semiconductor Lasers and Laser Dynamics VIII, 106820U (Presented at SPIE Photonics Europe: April 25, 2018; Published: 9 May 2018); https://doi.org/10.1117/12.2307040.
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