The dramatic optical property change of optical phase change materials (O-PCMs) between their amorphous and crystalline states potentially allows the realization of reconfigurable photonics devices with low power consumption, such as optical switches and routers, reconfigurable meta-optics, displays, and photonic memories. However, conventional O-PCMs, such as VO2 and Ge2Sb2Te5, are inherently plagued by their excessive optical losses even in dielectric states, limiting their optical performance and hence application space. In this talk, we present the development of a new group of O-PCMs and their implementations in novel photonic devices. Ge-Sb-Se-Te (GSST), obtained by partially substituting Te with Se in traditional GST alloys, feature unprecedented broadband optical transparency covering the telecommunication bands to LWIR. Capitalizing on the dramatically-enhanced optical performance, novel non-volatile, reconfigurable on-chip photonics devices and architectures are demonstrated. GSST-integrated Si photonics based on the material innovation and novel “non-perturbative” designs exhibit significantly improved switching performance over state-of-the-art GST-based approaches. The technology is further scalable to realize non-blocking matrix switches with arbitrary network complexity, paving the path towards high performance reconfigurable photonics chips.
Yifei Zhang, Jeffrey B. Chou, Qihang Zhang, Junying Li, Huashan Li, Qingyang Du, Anupama Yadav, Myungkoo Kang, Cesar Blanco, Huikai Zhong, Mikhail Y. Shalaginov, Jeffrey C. Grossman, Richard Soref, Vladimir Liberman, Kathleen Richardson, Juejun Hu, and Tian Gu, "Reconfigurable photonics enabled by optical phase change materials (Conference Presentation)," Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 1068606 (Presented at SPIE Photonics Europe: April 23, 2018; Published: 23 May 2018); https://doi.org/10.1117/12.2314894.5788752772001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon