The third-order nonlinear parameter of Ge-rich SiGe waveguides are experimentally retrieved using a bi-directional top hat D-scan at λ = 1.58 μm. The obtained values are then used to fit the theoretical equation, providing promising values in the mid-IR, where the nonlinear effects are no longer limited by two-photon absorption. New Ge-rich SiGe waveguide designs are provided to exploit the nonlinear properties in the mid-IR, showing a flat anomalous dispersion over one octave spanning from λ = 3 µm to λ = 8 μm and a γ parameter that decreases from γ = 10 W-1m-1 .
J. M. Ramírez, S. Serna, V. Vakarin, Q. Liu, J. Frigerio, A. Ballabio, X. Le Roux, L. Vivien, E. Cassan, G. Isella, N. Dubreuil, and D. Marris-Morini, "Ge-rich SiGe waveguides for supercontinuum generation in the mid-IR ," Proc. SPIE 10686, Silicon Photonics: From Fundamental Research to Manufacturing, 106860P (Presented at SPIE Photonics Europe: April 25, 2018; Published: 22 May 2018); https://doi.org/10.1117/12.2306873.
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