Electron multiplying (EM) CCD technology has been successfully implemented for many ground-based applications (from astronomical telescopes to synchrotrons and life sciences), but has yet to be utilized within the space environment. The technology has the potential to offer superior photon-counting performance compared to competing technologies, however the effects of radiation damage must be understood and mitigated. The primary concern is damage from solar protons that manifests as signal trapping sites within the device. These traps can act to capture and defer signal charge to later pixels, degrading Charge Transfer Efficiency (CTE). With knowledge of the properties of the silicon defects responsible for charge loss, it is possible to optimize transfer performance through customized clocking and illumination patterns. Here, we present techniques to improve the charge transfer performance of irradiated Teledyne e2v CCD201 20 EMCCDs, including optimized clocking and illumination patterns based on the knowledge of silicon defects provided by the “trap pumping” technique following room temperature irradiation.
Nathan L. Bush, David Hall, Ross Burgon, Andrew Holland, and Doug Jordan, "Improving charge transfer performance within irradiated EMCCDs (Conference Presentation)," Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 1070913 (Presented at SPIE Astronomical Telescopes + Instrumentation: June 12, 2018; Published: 10 July 2018); https://doi.org/10.1117/12.2313574.5807233600001.
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