Metasurfaces composed of designed Mie-resonant semicondcutor nanoparticles offer unique opportunities for controlling the properties of light fields . Most prominently, they can impose a spatially variant phase shift onto an incident light field, thereby providing control over its wave front with high transmittance efficiency . Furthermore, due to their resonant optical response, they can enhance and manipulate light emission processes, including spontaneous emission and nonlinear frequency generation.
This talk will provide an overview of our recent advances in light-emitting Mie-resonant semiconductor metasurfaces. In particular, we have studied spontaneous emission from metasurfaces integrated with various types of emitters, including semiconductor quantum dots, monolayers of transition metal dichalcogenides, and fluorescent centers in the substrate . We have also investigated nonlinear frequency generation in metasurfaces composed of materials with high second-order nonlinear susceptibility, such as gallium arsenide . By combining spatial mapping, spectroscopy, and Fourier imaging of the metasurfaces’ emission, we show that the directional and spectral properties of both the spontaneously emitted and the nonlinear generated light can be tailored by the metasurface design. Our results demonstrate that Mie-resonant semiconductor metasurfaces offer an interesting route towards ultra-flat sources of tailored light fields.
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