During last 15 years significant attention of the research community was devoted to 2D materials, first-carbon based and recently- broad class of 2D semiconductors such as transition metal dichalcogenides ( TMDC), black phosphorous etc. Amazing wealth of physical and optoelectronic phenomena in TMDC make them an extremely attractive object of research both from the fundamental and applied points of view. Raman and photoluminescence spectroscopy proved to be powerful tools for characterization of 2D semiconductors. Unfortunately, spatial resolution of these techniques, on the order of few hundreds of nanometers is not sufficient to address important heterogeneities in these materials. STEM, to the contrary, provides true atomic resolution and allows addressing defects at single atom scale, but lacks to great extent correlation with physical properties of the materials in question. Luckily, recent advances in tip enhanced Raman spectroscopy ( TERS) and tip enhanced photoluminescence ( TEPL) and cross-correlation of these near-filed spectroscopic data with other properties probed by scanning probe microscopy, provide scientific community with a powerful and relatively easy-to-use characterization method that address the properties of 2D materials at proper scale. We’ll demonstrate application of cross-correlated TERS, TEPL, Kelvin probe microscopy, photocurrent mapping, friction etc for characterization of grain boundaries, physical defects, nanoscale doping heterogeneities in TMDCs and exciton population heterogeneities in the vicinity of the crystal edges in 2D semiconductors.

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Andrey Krayev, "Phys-Chem nm-scale characterization of 2D materials: technique is there-use it! (Conference Presentation)," Proc. SPIE 10725, Low-Dimensional Materials and Devices 2018, 107250M (Presented at SPIE Nanoscience + Engineering: August 23, 2018; Published: 17 September 2018); https://doi.org/10.1117/12.2323105.5836016909001.