III–V semiconductor nanowires combine the properties of III–V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III–V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.
Hannah J. Joyce, Jack Alexander-Webber, Kun Peng, Michael B. Johnston, Patrick Parkinson, H. Hoe Tan, and C. Jagadish, "Engineering semiconductor nanowires for photodetection: from visible to terahertz," Proc. SPIE 10729, Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 1072909 (Presented at SPIE Nanoscience + Engineering: August 23, 2018; Published: 18 September 2018); https://doi.org/10.1117/12.2320715.
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