From Event: SPIE Optical Engineering + Applications, 2018
Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability up to 1400 C. It has a band gap of 4.5-4.9 eV, much higher than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic β-phase Ga2O3 represents the thermodynamically stable crystal among the known five phases (α, β, γ, δ, ɛ). The breakdown field of β-Ga2O3 is estimated to be 8 MV/cm, which is about three times larger than that of 4H-SiC and GaN. These unique properties make β-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. More advantageously, single crystal β-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Different from the molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) growth techniques, we have developed a low pressure chemical vapor deposition (LPCVD) method to grow high quality β-Ga2O3 thin films on both native Ga2O3 and c-sapphire substrates with controllable doping and fast growth rates up to 10 µm/hr. In this talk, we present the growth, material characterization and device demonstration of β-Ga2O3 thin films grown via LPCVD. The β-Ga2O3 thin films were grown on native β-Ga2O3 (010), (001) and (-201) substrates and sapphire substrates using high purity gallium and oxygen as the precursors, and argon (Ar) as the carrier gas. The growth temperature ranged between 850 ˚C and 950 ˚C. Fundamental material properties including temperature dependent Hall measurements will be discussed.
Hongping Zhao, "LPCVD Grown β-Ga2O3: Materials and devices (Conference Presentation)," Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 1075405 (Presented at SPIE Optical Engineering + Applications: August 21, 2018; Published: 17 September 2018); https://doi.org/10.1117/12.2322940.5836072385001.
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