From Event: SPIE Optical Engineering + Applications, 2018
Linear avalanche photodiodes are ultra high sensitive optical detectors for low luminescent applicants. Low noise silicon
reach-through avalanche photodiodes are designed and implemented through 0.35 μm high voltage CMOS process.
Separated absorption multiplication (SAM) structure with vertical n++/pi/p+/pi/p five layers is adopted. The remarkable
low noise is archived while maintaining linear multiplication. The photo sensitive area is 200 μm in diameter. The
typical reach-through voltage and the breakdown voltage is tested to be 55 V, and 176 V, respectively. The dark current
at the gain M=100 is tested to be 10 - 100 pA. The responsive wavelength is 400-1000 nm. The peak responsivity is
tested to be 25 A/W at 850 nm wavelength to show the successful near infrared enhanced responsivity. The excess noise
factor is estimated to be 4, much lower than those in the reported high voltage CMOS avalanche photodiodes, but close
to the commercial APD fabricated through special process.
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