Inpria is a leader in the development of high-performance photoresist materials for EUV lithography. By design, these photoresists enable patterning at extremely small pitches, exhibit high EUV absorption to reduce the photon shot noise otherwise amplified in conventional resists, and provide high etch selectivity to provide a large process window. Such characteristics derive from the metal oxide molecular cluster composition of the resists and the small, highly homogeneous building blocks this chemistry enables. We will present recent advances to Inpria photoresist platforms which have resulted in improved RLS performance, process stability, and photospeed tunability. We demonstrate the patterning capabilities for specific use cases in logic and memory applications, including the performance after etch. For patterning on an NXE:3300, the materials deliver large process windows both for line/space features at 26nm pitch needed for logic metal patterning and for the 43nm pitch hex pillar arrays required for DRAM applications. Pilot-scale batches of Inpria’s resists are routinely produced on our production line. We will review our manufacturing facility and the capabilities of our formulation process scaled to support the production requirements of leading device manufacturers.

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Jason K. Stowers, "Advances in metal oxide resist performance and production (Conference Presentation)," Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090W (Presented at SPIE Photomask Technology + Extreme Ultraviolet Lithography: September 20, 2018; Published: 12 October 2018); https://doi.org/10.1117/12.2502958.5848042202001.