EUV lithography has been desired as the leading technology for below Hp20nm. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off is the key issue. To overcome this issue, we are focusing on Organic & Inorganic Hard Mask as the bottom layer of EUV PR. Especially, Inorganic under layers (Si-HM) can perform not only as the lithographic performance enhancement layer for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution below hp16nm. The key points of our concepts are EUV-sensitive units of Si-HM. This new EUV sensitive Si-HM could resolve Hp14nm L/S pattern with wide DOF margin. It can also perform as the high universal materials in any development process (PTD & NTD) and any PR materials. Moreover, the latest Organic under layers developed for the advanced EUV CAR PR & Metal resist also will be discussed in the paper. From the Organic & Inorganic under layer material design, we will present new concepts to get high resolution in EUVL.
Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Mamoru Tamura, Yasunobu Someya, Makoto Nakajima, and Rikimaru Sakamoto, "Advanced development of organic and inorganic under layers for EUV lithography (Conference Presentation)," Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090Y (Presented at SPIE Photomask Technology + Extreme Ultraviolet Lithography: September 20, 2018; Published: 12 October 2018); https://doi.org/10.1117/12.2503298.5848041051001.
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