In this paper, we show results of further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design providing a record ~340 W output from a 2×12 nLIGHT element® in 105 μm diameter fiber. These diodes will allow next generation of fiber-coupled product capable of >250W output power from 105 μm/0.15 NA beam at 915 nm. There is also an increasing demand for low SWaP fiber-coupled diodes for enabling compact high energy laser systems for defense applications. We have demonstrated 600 watts and 60% efficiency at 15C in 220 μm/0.22 NA fiber resulting in specific mass and volume of 0.44 kg/kW and of 0.5 cm3/W respectively.
M. Kanskar, C. Bai, L. Bao, N. Biekert, Z. Chen, M. DeFranza, M. DeVito, K. Fortier, M. Grimshaw, X. Guan, M. Hemenway, S. Li, E. Martin, R. Martinsen, T. Prunty, W. Urbanek, B. Wilkins, J. Zhang, and S. Zhang, "High brightness diodes and 600W and 60% efficient fiber-coupled packages enabled by reduced-mode (REM) diodes," Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000H (Presented at SPIE LASE: February 03, 2019; Published: 4 March 2019); https://doi.org/10.1117/12.2510722.
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