Black silicon processing is a promising research area to improve optical properties of silicon solar cells. Currently, RIE method is used at cryogenic temperature because it enables a very good control of shapes of nano-structures but working at cryogenic temperature in a clean room can be an issue. In order to produce black silicon under realistic industrial conditions, room temperature process has to be achieved. We present a study aiming at etching silicon wafer surfaces using “Room Temperature SF6/O2 Reactive Ion Etching” (RT-RIE).
F. Atteia, J. Le Rouzo, G. Berginc, J. J. Simon, and L. Escoubas, "Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells," Proc. SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, 109130U (Presented at SPIE OPTO: February 06, 2019; Published: 27 February 2019); https://doi.org/10.1117/12.2509326.
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