By incorporating low weight percentages of graphene in our precursor solution and using a technique derived from spray pyrolysis, we obtained a low cost TCO with excellent properties, characterized by AFM, UV-VIS and Hall Effect. The film roughness was calculated to be ~7.49-12.7 nm, while band gap was determined to be ~4.0-4.2 eV. The material’s optical transparency ranges from 84-86% and its resistivity was measured to be ~5.5-8.5 x10-3 Ω cm. With these results, we suggest that the obtained material is a proper candidate for use in photovoltaic applications, such as Grätzel solar cells, which will be our main focus.
K. Esparza, V. Marañón, C. Enríquez, H. Pérez, J. Castañeda, R. Rodríguez, R. Patakfalvi, E. Rosendo, and R. Sato, "Synthesis and characterization of SnO2/graphene transparent conducting films," Proc. SPIE 10919, Oxide-based Materials and Devices X, 109191J (Presented at SPIE OPTO: February 06, 2019; Published: 1 March 2019); https://doi.org/10.1117/12.2508030.
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