Cascade pumping of type-I quantum well gain sections led to increase of the output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 µm. The wide stripe multimode lasers based on cascade lasers heterostructures generate watt class output power levels up to 3 µm. The corresponding narrow ridge single spatial mode and single frequency mode distributed feedback devices generate tens of mW. The external cavity lasers utilizing gain chips based on cascade diode laser heterostructures demonstrate extra wide tuning range. The short pulse passively mode-locked lasers generate optical frequency combs.

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Leon Shterengas, Takashi Hosoda, Tao Feng, Jiang Jiang, Alexey Belyanin, Gela Kipshidze, and Gregory Belenky, "Advances in development of the GaSb-based type-I quantum-well cascade-diode lasers: wavelength tuning and mode-locking (Conference Presentation)," Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 1093918 (Presented at SPIE OPTO: February 06, 2019; Published: 13 March 2019); https://doi.org/10.1117/12.2513637.6013188980001.