In patterning etch processes, the fabrication of multilayer films requires the precision of atomic scale X-Y CD controllability in complex hole patterns, and reduction of local variability such as Line Edge Roughness (LER), Line Width Roughness (LWR) and Local CDU (LCDU). In order to solve these requirements, we have developed Advanced Quasi-ALE technology which achieved reduction of LCDU, along with a wider X-Y CD control margin. In this paper, we introduce the three benefits of our atomic scale CD and variability control process technology; (1) XY CD control in oval patterns, (2) LCDU reduction and (3) wider etching window using Advanced Quasi-ALE technique. Hence, we will show that it has a significant potential to solve critical challenges in the patterning processes of N5 and beyond.
Toru Hisamatsu, Takayuki Katsunuma, Yoshihide Kihara, and Masanobu Honda, "Integrated atomic scale CD control and local variability reduction techniques," Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630B (Presented at SPIE Advanced Lithography: February 26, 2019; Published: 20 March 2019); https://doi.org/10.1117/12.2513832.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the proceedings. They include the speaker's narration with video of the slides and animations. Most include full-text papers. Interactive, searchable transcripts and closed captioning are now available for most presentations.
Search our growing collection of more than 18,000 conference presentations, including many plenaries and keynotes.