Low dark current and/or high operating temperature are the main motivations behind the nBn detector structures where removing the valence band discontinuity is usually an important design challenge. With the utilization of the bias polarity, these structures can also be easily designed as dual-band detectors and in this study, a dual-band (MWIR / LWIR) HgCdTe nBn detector configuration has been numerically examined. Valence band barrier suppression has been obtained with the delta-doped and compositional graded layers similar to the recent single band studies.

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Fatih Uzgur and Serdar Kocaman, "A dual-band HgCdTe nBn infrared detector design," Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 1112903 (Presented at SPIE Optical Engineering + Applications: August 14, 2019; Published: 9 September 2019); https://doi.org/10.1117/12.2529240.