From Event: SPIE Optical Engineering + Applications, 2019
Polycrystalline thin films of (Sb0.42Bi0.58)2Se3 are prepared by co-evaporation in a two-step process. First, the semiconducting layer is grown at 240°C. Subsequently the films are annealed in-situ at various temperatures. The incorporation of Bi into the orthorhombic Sb2Se3 system reduces the bandgap and thus widens the range for infrared detection. It is found that thin film layers can be prepared single phase, while a decomposition is observed for temperatures exceeding 440°C, where the rhombohedral structure of Bi2Se3 forms in addition. Photoluminescence measurements show an increased optoelectronic quality of the films with increasing annealing temperature. However, the luminescence signal reduces when the films decompose into the orthorhombic and the rhombohedral phases.
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Thomas P. Weiss, Michele Melchiorre, Panagiota Arnou, Nathalie Valle, Phillip J. Dale, and Susanne Siebentritt, "Polycrystalline (Sb,Bi)2Se3 thin film layers for SWIR detection," Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 1112904 (Presented at SPIE Optical Engineering + Applications: August 14, 2019; Published: 9 September 2019); https://doi.org/10.1117/12.2529326.
