Sn-containing group IV semiconductors (Si)GeSn represent a versatile platform to implement a variety of Si-compatible photonic, optoelectronic, and photovoltaic devices. This class of semiconductors provides two degrees of freedom, strain and composition, to tailor the band structure and lattice parameter thus laying the groundwork to implement novel heterostructures and low-dimensional systems on a Si substrate. In this presentation, we will discuss the recent progress in controlling and understanding the opto-electronic properties of metastable (Si)GeSn semiconductor nanowires and heterostructures. We will shed new light on the basic mechanisms governing their epitaxial growth and thermal stability. We will also discuss the opto-electronic properties and present strategies to integrate these material systems in the fabrication of short wavelength infrared (SWIR) and mid-infrared (MIR) detectors and light emitting devices.
Simone Assali, Anis Attiaoui, Salim Abdi, Mahmoud Atalla, Étienne Bouthillier, Lu Luo, Léonor Groell, Jérôme Nicolas, Samik Mukherjee, Sebastian Koelling, and Oussama Moutanabbir, "SWIR and MIR emission and detection using an all-group IV platform (Conference Presentation)," Proc. SPIE 11291, Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII, 112910C (Presented at SPIE OPTO: February 05, 2020; Published: 12 May 2020); https://doi.org/10.1117/12.2563465.6138751569001.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the proceedings. They include the speaker's narration with video of the slides and animations. Most include full-text papers. Interactive, searchable transcripts and closed captioning are now available for most presentations.
Search our growing collection of more than 29,500 conference presentations, including many plenaries and keynotes.