The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of EUV absorption and reflection are needed to extract the corresponding actinic optical properties and structural parameters. Here, we report on two endstations within imec’s AttoLab that enable actinic EUV absorption and reflection measurements. We commission these tools with measurements on model thin film and photoresist systems and provide extracted optical parameters as well as absorption kinetics, respectively. These results showcase the power of these tools for providing crucial data for material optimization and lithographic simulation.

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Kevin M. Dorney, Nicola N. Kissoon, Fabian Holzmeier, Esben W. Larsen, Dhirendra P. Singh, Shikhar Arvind, Sayantani Santra, Roberto Fallica, Igor Makhotkin, Vicky Philipsen, Stefan De Gendt, Claudia Fleischmann, Paul A. W. van der Heide, and John S. Petersen, "Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry," Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 1249407 (Presented at SPIE Advanced Lithography + Patterning: February 28, 2023; Published: 28 April 2023); https://doi.org/10.1117/12.2658359.