This study investigates the role of EUV mask absorber materials defects on stochastic defect formation in a lithographic process using simulations. The purpose of these simulations is to compare absorber materials by their role of affecting stochastic defects as well as CD performance in the lithographic process. The absorber materials are tested for bright and dark field masks using low defectivity and CD criteria to define process windows for different pattern types. The process windows are examined to identify and compare an estimated process window overlap that takes patterns, material, CD performance and defectivity into account. The defectivity of the stochastic process simulation was increased using a modification to the distribution of chemical components that resembles the effect of PAG and Quencher molecules forming clusters. The study demonstrates that the overlap of low defectivity process windows strongly depends on the types of patterns and the absorber material.

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Lawrence S. Melvin III, Yudhishthir Kandel, Zachary A. Levinson, and Ulrich Welling, "Absorber material deficiency impact on a stochastically patterned wafer analyzed with a clustered model," Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940F (Presented at SPIE Advanced Lithography + Patterning: March 01, 2023; Published: 28 April 2023); https://doi.org/10.1117/12.2658777.