From Event: SPIE Advanced Lithography + Patterning, 2023
ASML NXE scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. EUV sources have improved performance and availability. In this paper we provide an overview of 13.5nm tin laserproduced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM for the most advanced nodes. Sources at customers operate at ~250 Watt power with high availability. Progress in Collector Lifetime and EUV Source performance is shown. High NA EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source geometry and few new requirements for source performance. In this paper we additionally discuss our progress on the High NA source towards shipment to the customer later this year. Finally, we provide an update on power scaling at ASMLs research systems including reaching a new 600W milestone for EUV Sources and the next steps towards even higher powers.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl Umstadter, Matthew Graham, Michael Purvis, Alex Schafgans, Jayson Stewart, Peter Mayer, and Daniel Brown, "EUV light source for high-NA and low-NA lithography," Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940Z (Presented at SPIE Advanced Lithography + Patterning: March 02, 2023; Published: 28 April 2023); https://doi.org/10.1117/12.2657772.