EUV resist is prone to damage (shrinkage) caused by electron irradiation during dimensional measurement using electron beam tool, such as CD-SEM. High repeatability and low shrinkage is demanded for metrology. In this study, we propose solutions that can reduce shrinkage and maintain performance of repeatability. We evaluated shrinkage of EUV resist using 100V low energy electron beam. Comparing to 300V electron beam, 100V beam enabled to shrinkage. Meanwhile, repeatability improvement was achieved by multiple proprietary solutions.

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Masaki Sugie, Toshimasa Kameda, and Shunsuke Mizutani, "High repeatability and low shrinkage solution using CD-SEM for EUV resist," Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 1249615 (Presented at SPIE Advanced Lithography + Patterning: March 01, 2023; Published: 27 April 2023); https://doi.org/10.1117/12.2657680.