The unique suitability of metal-oxide (MOx) photoresists for high-NA EUV lithography has been demonstrated by successful imaging of these resists at the resolution limit of high-NA exposure tools. We utilize the capabilities of the 0.5-NA Berkeley MET5 and a 0.33-NA scanner to explore the RLS impact of specific formulation adjustments, alternative develop chemistries and bake processes, and etch optimization of features from 16-26nm pitch. We investigate the effect of these optimizations on defectivity at aggressive pitches using 0.33-NA exposures. These results validate both fundamental advantages and continued progress of MOx development to align with the introduction of high-NA imaging.

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Peter De Schepper, Brian Cardineau, Amrit K. Narasimhan, Lauren McQuade, Jan Doise, Michael Kocsis, Kazuki Kasahara, and Stephen T. Meyers, "MOx resist formulation and process advances towards high-NA EUV lithography," Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249804 (Presented at SPIE Advanced Lithography + Patterning: February 27, 2023; Published: 30 April 2023); https://doi.org/10.1117/12.2658499.6325344831112.