In semiconductor manufacturing, thousands of process steps are required to produce an integrated circuit (IC) chip; each with a uniformity signature that impacts yield. Typically, non-uniformities can be minimized by tuning process conditions. However, even after extensive process optimization, there’s often a residual signature that needs to be removed. The Z-Height chemistry and hardware set applies a spatial correction aimed at removing these residuals and improving planarity. The pitch doubled self-aligned block (SAB) approach of patterning sub-resolution metal lines is one such integration that benefits from this correction method by improving the block height uniformity to ensure proper pattern transfer and a wider process window. In this paper, we will discuss the approach to correct for the thickness non-uniformities induced by the spin-coating and etch processes of a spin-on glass film. Initial results show a 36% improvement in film thickness variation.

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Jodi Grzeskowiak, Michael Murphy, Daniel Fulford, and David Conklin, "Process signature correction through film thickness modification of a spin-on glass film," Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 1249808 (Presented at SPIE Advanced Lithography + Patterning: February 27, 2023; Published: 30 April 2023); https://doi.org/10.1117/12.2657589.6325343726112.