Scanning transmission electron microscopy (STEM) annular dark field (ADF), high angle annular dark field (HAADF), cathodoluminescence (CL) and energy-dispersive X-ray spectroscopy (EDX) analysis were carried out to investigate the structural and optical properties of (AlxGa1-x)0.5In0.5P light emitting diodes (LEDs). Extended defect structures were observed in the LED active region, which exhibit defect emission that is shifted by 0.25 eV relative to the multi quantum well (MQW) emission. The morphology and composition of the defect structures was elucidated and the results confirmed by growth experiments and photoluminescence (PL) measurements.
Andreas Rudolph, "Extended defect structures observed in (AlxGa1-x)0.5In0.5P light emitting diodes grown by MOVPE (Presentation Recording)," Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530W (Presented at SPIE Nanoscience + Engineering: August 13, 2015; Published: 5 October 2015); https://doi.org/10.1117/12.2191527.4519371099001.
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