From Event: SPIE Nanoscience + Engineering, 2015
A major problem in the optical lithography was the diffraction limit. Here, we report and demonstrate a lithography method, Quantum Optical Lithography [1,2], able to attain 1 nm resolution by optical means using new materials (fluorescent photosensitive glass-ceramics and QMC-5 resist). The performance is several times better than that described for any optical or Electron Beam Lithography (EBL) methods. In Fig. 1 we present TEM images of 1 nm lines recorded at 9.6 m/s.
a) b)
Fig. 1 TEM images of: a) multiple 1 nm lines written in a fluorescent photosensitive glass-ceramics sample;
b) single 1 nm line written in QMC-5 resist.
References
[1] E. Pavel, S. Jinga, B.S. Vasile, A. Dinescu, V. Marinescu, R. Trusca and N. Tosa, “Quantum Optical Lithography from 1 nm resolution to pattern transfer on silicon wafer“, Optics and Laser Technology, 60 (2014) 80-84.
[2] E. Pavel, S. Jinga, E. Andronescu, B.S. Vasile, G. Kada, A. Sasahara, N. Tosa, A. Matei, M. Dinescu, A. Dinescu
and O.R. Vasile, “2 nm Quantum Optical Lithography“, Optics Communications,291 (2013) 259–263
© 2015 COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eugen Pavel, "Nanofabrication at 1nm resolution by quantum optical lithography (Presentation Recording)," Proc. SPIE 9556, Nanoengineering: Fabrication, Properties, Optics, and Devices XII, 95560L (Presented at SPIE Nanoscience + Engineering: August 12, 2015; Published: 5 October 2015); https://doi.org/10.1117/12.2187249.4519371357001.
