High quality scatterometry standard samples have been developed to improve the tool matching between different scatterometry methods and tools as well as with high resolution microscopic methods such as scanning electron microscopy or atomic force microscopy and to support traceable and absolute scatterometric critical dimension metrology in lithographic nanomanufacturing. First samples based on one dimensional Si or on Si3N4 grating targets have been manufactured and characterized for this purpose. The etched gratings have periods down to 50 nm and contain areas of reduced density to enable AFM measurements for comparison. Each sample contains additionally at least one large area scatterometry target suitable for grazing incidence small angle X-ray scattering. We present the current design and the characterization of structure details and the grating quality based on AFM, optical, EUV and X-Ray scatterometry as well as spectroscopic ellipsometry measurements. The final traceable calibration of these standards is currently performed by applying and combining different scatterometric as well as imaging calibration methods. We present first calibration results and discuss the final design and the aimed specifications of the standard samples to face the tough requirements for future technology nodes in lithography.
Emil Agocs, Bernd Bodermann, Sven Burger, Gaoliang Dai, Johannes Endres, Poul-Erik Hansen, Lars Nielson, Morten Hannibal Madsen, Sebastian Heidenreich, Michael Krumrey, Bernd Loechel, Juergen Probst, Frank Scholze, Victor Soltwisch, and Matthias Wurm, "Scatterometry reference standards to improve tool matching and traceability in lithographical nanomanufacturing," Proc. SPIE 9556, Nanoengineering: Fabrication, Properties, Optics, and Devices XII, 955610 (Presented at SPIE Nanoscience + Engineering: August 12, 2015; Published: 20 August 2015); https://doi.org/10.1117/12.2190409.
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